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savantic semiconductor product specification silicon pnp power transistors 2SA1195 d escription with to-202 package high power dissipation complement to type 2sc2483 applications for high voltage and general purpose amplification pinning(see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -6 v i c collector current -1.5 a i b base current -0.5 a t a =25 2 p c collector power dissipation t c =25 15 w t j junction temperature 175 t stg storage temperature -55~150 fig.1 simplified outline (to-202) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1195 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 160 v v cesat collector-emitter saturation voltage i c =-500ma ;i b =-50m a -1.0 v v be base-emitter on voltage i c =-5ma ; v ce =-5v -0.7 v h fe-1 dc current gain i c =-200ma ; v ce =-5v 60 200 h fe-2 dc current gain i c =-500ma ; v ce =-5v 40 i cbo collector cut-off current v cb =-150v; i e =0 -1 a i ebo emitter cut-off current v eb =-6v; i c =0 -1 a c ob output capacitance i e =0; v cb =-10v;f=1mhz 35 pf f t transition frequency i e =-100ma ; v cb =-5v 15 50 mhz h fe classifications r o 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1195 package outline fig.2 outline dimensions

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